January 21, 2010 15:00 - 16:00
Empa, Dübendorf, Theodor-Erismann-Auditorium, VE102
50 years of intense development did not fundamentally change the initial concept of the Metal-Oxide-Semiconductor Field-Effect-Transistor. It relies on charge modulation at the interface between two dissimilar materials and allows the microelectronic industry to expand exponentially and to disseminate in our environment. Such a success derives from one simple fact: device scaling enable chips to be produced faster and cheaper while keeping the basic materials set. This statement does not apply to the future. A shift has already occured from dimensions scaling to materials properties scaling. The introduction of high-Û materials perfectly illustrates such a transition and new materials stacked in alternative device structures must be further developed. Additional development costs and potentially smaller performance gains must also be compensated and the integration of new functions implemented with new materials can offer such added value. A perspective on these different questions shall be presented with illustrations of most recent examples.
The language of the presentation is English.
Free entrance, guests are welcome
Dr. Anne Satir
Tel: 044 823 4562